Abstract
The sum of the squares of the electronic transition moments, Σ| R e | 2, for the E 1 Σ + − X 1 Σ + band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas was produced by shock-heating a mixture of SiCl 4, N 2O and Ar, and the spectra were recorded photographically in the 150–230 nm wavelength range. The values of the Σ| R e | 2 were determined by comparing the measured absorption spectra with those produced by a line-be-line synthetic spectrum calculation. The value of the Σ| R e | 2 so deduced at an r-centroid value of 3.0 Bohr was 0.86±0.10 atomic units.
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