Abstract
The spectral and energy characteristics of two planar dielectric resonators (DRs), open and shielded from the curvilinear surface, excited in higher-order modes as whispering gallery modes (WGMs) in Ka-waveband are investigated. These resonators are formed by a thin (compared to the operating wavelength) disk dielectric structure, located between two conducting planes. Thus, the E-field of the resonator was limited along the height of the planar disk by two conducting surfaces. The resonance properties of such a structure are determined by the condition of total internal reflection of waves from the internal curvilinear surface of a dielectric disk. The carried out investigations shown that the unloaded Q-factor is increased at the arrangement of planar dielectric disk inside the ring metal shield at the certain ratio of the radiuses of the shield and dielectric disk. The Q-factor of the shielded resonant structure at the high-frequency edge increases to 40 %. The partial displacement of the resonant field of the WGMs modes from the dielectric to the air gap is the cause of this effect. It leads to decrease in losses in the dielectric material. A computer simulation of the WGMs fields in the planar DR was carried out using the CST Microwave Studio 2013 software to confirm this effect. In addition, computer simulation results shown that these WGMs in the planar DR are characterized by a homogeneous distribution of the resonant field along the axial coordinate. The perspectives of using planar DR in solid-state Ka-band oscillators are shown.
Highlights
the E-field of the resonator was limited along the height of the planar disk
The resonance properties of such a structure are determined by the condition of total internal reflection
He Jaochan – Deputy Director, East China Research Institute “Photoelectronics”
Summary
Исследованы спектральные и энергетические характеристики открытого и экранированного со стороны криволинейной поверхности планарных диэлектрических резонаторов (ДР), возбуждаемых на модах высших порядков типа шепчущей галереи (ШГ) в 8-миллиметровом диапазоне длин волн. Электрическая компонента резонансного поля ограничивалось по высоте планарного диска двумя проводящими поверхностями. Резонансные свойства такой структуры определялись условием полного внутреннего отражения волн от внутренней криволинейной поверхности диэлектрического диска. Причиной данного эффекта является частичное смещение резонансного поля мод ШГ из области диэлектрика в воздушный зазор, что приводит к уменьшению потерь в материале диэлектрика. Результаты компьютерного моделирования показывают, что эти моды ШГ характеризуются однородным распределением резонансного поля вдоль аксиальной координаты. Ключевые слова: дисковый планарный диэлектрический резонатор, моды шепчущей галереи, повышение добротности, 8-миллиметровый диапазон длин волн. Экранированный планарный диэлектрический резонатор с модами шепчущей галереи / А.
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