Abstract
A pixel structure is proposed in which a vertical transfer gate is shared between two neighbor pixels. Other circuit elements are also shared and a pixel configuration with 2 transistors per pixel is introduced. The shared transfer gate is a capacitive deep trench isolation structure (CDTI) which is located at the periphery of the pixels. Using the CDTI results in a vertical charge transfer path from the depth of the pixel to the surface. At the surface of the proposed structure, there are only 1.5 transistors per pixel. By managing the doping profile at the CDTI sidewalls the vertical charge transfer with 70% charge transfer efficiency is obtained.
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