Abstract
A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.
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