Abstract
An extension to large laser power values of the semiempirical model for the laser-induced molten zone is given. The influence of the wafer preheating temperature and the thickness of thin capping layers on the molten zone is discussed. The variation of the size of the molten zone as caused by a change of the laser spot size is studied. An optimal laser power is determined to minimize the variation of the size of the molten zone as a result of a variation of the laser spot size. The difference between the laser power required to reach melt temperature in a silicon on insulator wafer and the laser power required to obtain complete melting is determined. A method to calculate the power required to reach the onset of complete melting in the case of a circular pseudostationary laser spot is proposed. The influence of the absorptances in liquid and in solid silicon, the thickness of the insulating layer, the thickness of the silicon overlayer, and the preheating temperature on the difference between the two threshold powers is treated.
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