Abstract
A semianalytical model of a field-effect ballistic nanotransistor with a nanowire-based or nano- tube-based channel, which is applicable to describe transistors with various gate configurations, is proposed. Based on this model, the calculations of the distribution of the potential and electron concentration in a transistor channel are determined and its current-voltage characteristics are plotted. Considerable distinctions regarding the computation of short-channel transistors based on the local model and good agreement with the computations performed according to the rigorous models are revealed.
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