Abstract
Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband UV photodetector employing a p-type NiOx layer and an n-type β-Ga2O3 heterostructure in PIN configuration for the first time. Simulations are conducted to optimize the doping concentration and thickness of the NiOx layer, ensuring that (a) a reasonable depletion width is maintained within the NiOx layer for UV-A and UV-B light absorption; (b) anode ohmic contacts are formed on the nondepleted NiOx film, and (c) >70% of the UV-C light is absorbed by β-Ga2O3. The optimized NiOx/β-Ga2O3 PIN photodiode exhibits good responsivity to incident light wavelengths in the UV-A, UV-B, and UV-C regions. While the NiOx layer is considered to be responsible for providing good photoresponsivity in the UV-A and UV-B regions, a highly resistive (near-intrinsic) β-Ga2O3 layer is required for the absorption of incident UV-C light. A record detectivity of >1011 cm Hz0.5 W−1 for the UV-B and UV-C regions and >1010 cm Hz0.5 W−1 for the UV-A region is observed in the NiOx/β-Ga2O3 heterostructure PIN photodiode during the self-powered operation. The results presented in this study are promising and instigate device design strategies for (ultra)wide bandgap semiconductor-based broadband UV PIN photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
