Abstract

A self-aligned fabrication process for AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented. The advantage of this process is that selfaligned structure and device passivation can be realized simultaneously using silicon nitride sidewall technique. The silicon nitride sidewall functions both as an isolation layer to prevent shorting between the base metal and the emitter mesa and as an etching mask to prevent AlGaAs passivation layer to be removed. A current gain cutoff frequency f/sub T/ of 30 GHz and a maximum oscillation frequency f/sub max/ of 50 GHz have been obtained from the device with 3 /spl mu/m/spl times/15 /spl mu/m emitter size.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.