Abstract

A novel method of preparing high-performance self-aligned silicon bipolar transistors having a Si MBE (molecular beam epitaxy) base layer, called SSSB (super self-aligned selectively grown base) technology, has been developed. An SSSB technology features the simultaneous formation of a facet-free, ultrathin selective silicon epitaxial layer, and a selectively deposited graft base polysilicon film. Under an optimized gas-source MBE process condition, uniform epitaxial growth onto the

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