Abstract
We proposed a self-powered UV–vis–NIR Schottky junction photodiode based on a unique combination of radiation-hard functional materials: thin-film semi-metal Graphite and CdZnTe single-crystal compound semiconductor. The graphite/CdZnTe Schottky junction photodiodes exhibit a maximum responsivity of 0.25 A W−1 and detectivity of 6.5 × 1011 Jones, close to the best heterojunction photodiodes based on CdZnTe solid solution. The devices are also characterized by short rise/fall times (1.2/7.2 µs) and a wide linear dynamic range (77 dB). The proposed photodiodes are promising for applications in space and terrestrial areas with high levels of ionizing radiation.
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