Abstract
We describe the use of computer fitting of photoelectric response measurements to the theoretically expected Fowler curve, for a Schottky barrier. The information on the barrier thus obtained is compared with that using three other methods of analysis, described in a previous paper [4]. In particular, computer fitting to a Fowler curve may give: 1. (a) improved determination of the barrier height, as asymptotic approximations are not needed. If the barrier is obtained with great accuracy the determination of A** is improved—see ref[4]. 2. (b) the Fermi level for the metal involved in the Schottky contact (the distance between the Fermi level and the bottom of the conduction band). From the Fermi level the valence can be determined. 3. (c) the level of “hopping conduction” for amorphous semiconductors.
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