Abstract
In this paper, based on the different etching characteristics between GaN and Ga2O3, large-scale and vertically aligned β-Ga2O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. GaN micro-/nanowire arrays were prepared first by inductively coupled plasma (ICP) etching using self-organized or patterning nickel masks as the etching masks, and then the Ga2O3 shell layer converted from GaN was formed by thermal oxidation, resulting in GaN@Ga2O3 micro-/nanowire arrays. After the GaN core of GaN@Ga2O3 micro-/nanowire arrays was removed by ICP etching, hollow Ga2O3 tubes were obtained successfully. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can also be controlled with the thermal oxidation conditions. These vertical β-Ga2O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices.
Highlights
In this paper, based on the different etching characteristics between GaN and Ga2 O3, large-scale and vertically aligned β-Ga2 O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method
Motivated by the above study, we propose a new method based on selective dry etching for large-scale manufacturing of vertically aligned β-Ga2 O3 NT array, that is, the Ga2 O3 NT arrays can be fabricated by etching away the GaN core of GaN@Ga2 O3 core-shell NW arrays
A 4 μm-thick GaN epitaxial film used in this study was grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD) [28], and a 200 nmthick SiO2 protective layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on the GaN epitaxial wafer
Summary
In this paper, based on the different etching characteristics between GaN and Ga2 O3 , large-scale and vertically aligned β-Ga2 O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can be controlled with the thermal oxidation conditions. These vertical β-Ga2 O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices. The monoclinic β-Ga2 O3 has become one of the most important functional materials for high-power applications and UV detection It has a wide bandgap (~4.9 eV at room temperature), a high expected breakdown electric field (8 MV/cm), great thermal and chemical stability. The etching behavior of Ga2 O3 is completely different from that of GaN, Academic Editors: Konstantins
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