Abstract
We have attempted to measure the level of deep electron trapping centres in Ge(Li) detectors by observing the variation of pulse amplitude with temperature over a wide temperature range. The mean time TD for the re-emission of a trapped carrier from a given level decreases exponentially with increasing temperature; as TD becomes shorter than the amplifier time constants, pulse amplitude should show an increase over a narrow temperature interval. No such transition was observed between 80 and 160 K. We conclude that the main electron trap is deeper than 0.175 eV.
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