Abstract
This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)-paralleled APD (SDFP-APD) for the fifth-generation (5G) mobile system, which is composed of an FET paralleled with two SDs. The simulation results show that the SDFP-APD has the best compression compensation for the radio frequency power amplifier (RFPA) among the SD-APD, the FET-APD and the SDFP-APD. Furthermore, the measurement results illustrate that the SDFP-APD can improve the adjacent channel leakage ratio of the RFPA with the best linearisation performance among the three APDs and reduce the error vector magnitude while applying a 100-MHz bandwidth 5G new radio signal. The proposed SDPF-APD can be a promising linearisation technique for 5G small-cell base stations.
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