Abstract
Hydrogen bromide (HBr) magnetron enhanced reactive ion etching (MERIE) damage on crystalline silicon was investigated by studying the electrical properties of subsequently formed Schottky diodes. After removal of 4000 Å of silicon from p-type and n-type Si wafers in a MERIE system using HBr chemistry, Schottky diodes were formed on the surface and their electrical characteristics evaluated to assess the influence of ion bombardment. In p-type Si hydrogen permeation was found to be the dominant factor of the RIE damage causing deactivation of dopants and Schottky barrier height enhancement. However, such effects can be removed by anneal at 180 °C. On the other hand, no significant changes were observed in n-Si, with or without anneals at various temperatures. In both cases manifestation of ion-bombardment damage was absent, in contrast to what has generally been seen in RIE systems using conventional gas chemistry.
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