Abstract
A thin film (thickness: 1.5 nm) of tetracyanoquinodimethane (TCNQ), a well-known electron acceptor, was fabricated on p-Si and n-Si using a spin casting method. The junction properties of these systems were investigated using scanning tunneling spectroscopy (STS). I/V curves of the two systems showed rectifying properties with different polarity. It can provide a new technology to fabricate molecular-level rectifier if nanolithography is accomplished on these systems.
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