Abstract
ABSTRACTScanning tunneling microscopy (STM) and reflection high-energy diffraction (RHEED) have been employed to investigate the morphology of faceted GaAs(001) surfaces grown by molecular beam epitaxy (MBE). The RHEED pattern monitored during the growth indicates that the faceting corresponds to (711)A planes. The STM images obtained on these surfaces reveal predominantly a (2×4) local ordering, although unusual (2×3) and (2×6) structures have also been observed. The atom-resolved imaging of the (2×4) structure indicates that the unit cell consists of two As dimers and two missing dimers, identical to the structure obtained on the flat As-rich GaAs(001)-(2×4) surface. Furthermore, islands on the surface are found to be anisotropie, with a shape anisotropy of about 4:1 for step A to step B. The anisotropy is explained in terms of the difference in step edge reactivity.
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