A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS

Abstract

6H-SiC photoconductive semiconductor switches (PCSS) are new alternative of high power microwave (HPM) or RF generators with the special potential of compactness, tunable frequency and pulse width due to the superior material properties. For PCSS behavior investigation including on-resistance and transient, optical absorption, carrier process, and circuit elements are commonly important issues. This brief builds the major physics framework from the expressions of these influence factors considering simplicity and reliability. According to the basic physics models, a scalable, general model of vanadium compensated, semi-insulating (VCSI), vertical 6H-SiC PCSS is constructed in PSpice. The experiments are performed to verify this circuit model. Consequently, the correspondence between the measured results and simulation results proves its applicability.