Abstract
A scalable active compensatory sub-circuit that focuses on and improves the accuracy of the GaN HEMT large signal model is proposed in this letter. Zero error between the simulated and measured dc $I$ – $V$ curves is obtained. Combining empirical and table-based models, time-consuming procedures for parameters extraction and optimizing can be simplified. With a normalizing factor introduced, the scaling of the model is accomplished. The validity of the proposed model is investigated experimentally. This model can be applied for devices with different designs and technology.
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