Abstract
Resistance random access memory (RRAM) based true random number generator (TRNG) has great potential to be applied to hardware security owing to its intrinsic switching variability. Especially the high resistance state (HRS) variation is usually taken as the entropy source of RRAM-based TRNG. However, the small HRS variation of RRAM may be introduced owing to fabrication process fluctuations, which may lead to error bits and be vulnerable to noise interference. In this work, we propose an RRAM-based TRNG with a 2T1R architecture scheme, which can effectively distinguish the resistance values of HRS with an accuracy of 1.5 kΩ. As a result, the error bits can be corrected to a certain extent while the noise is suppressed. Finally, a 2T1R RRAM-based TRNG macro is simulated and verified using the 28 nm CMOS process, which suggests its potential for hardware security applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.