Abstract
Gallium nitride (GaN) was deposited on sapphire at 275 °C, using plasma-enhanced atomic layer deposition. The films are single-crystal for the first ∼5 nm, before they transition to a polycrystalline structure. These structural shifts are reflected in the variations of the refractive index.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
