Abstract
A novel interlayer dielectric film formation technology for multilevel interconnection by catalytic CVD (chemical vapor deposition) has been developed. This technique utilizes fluoro-triethoxy-silane (FSi(OC/sub 2/H/sub 5/)/sub 3/) and water vapor as source gases. It has been found that the film deposited at 25 degrees C has remarkably good properties, such as a small thermal stress increase, tightly bonded Si-O networks with no OH radicals, a small residual stress (50 MPa), a small dielectric constant
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