Abstract
A simple MOSFET series resistance extraction method using multiple drain current versus gate voltage curves of a single device is proposed, where mobility modulation by a horizontal electric field (i.e., weak velocity saturation) is taken into account. The method is validated using TCAD, where series resistance determined from internal potential distributions was used as a reliable reference. Measurement results were also obtained which further support the validity of the method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
