Abstract
In this paper we present an analytical, fast, accurate and robust technique for the determination of the circuit model elements of HEMTs in the microwave range. By this method the values of the equivalent circuit parameters of the device under test are extracted using three measured scattering (S) parameter sets without any optimization. We also investigated the influence of the reverse transfer conductance Re(Y12) on the modelling by means of a gate drain resistance Rdg. The validity of this method was verified upon a set of pseudomorphic HEMTs having different gate widths tested on wafer at several bias and temperature conditions. Very good agreement between the simulated and measured S-parameters has been obtained. The procedure has been implemented in Agilent VEE language as a fully automated tool to allow an accurate, fast and complete device characterization requiring no operator supervision.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
