Abstract
Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure-based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up-to-date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide-based advanced devices for optical and electronic applications including photodetectors, light-emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3-related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.
Highlights
The transition metal oxide tungsten oxide (WO3 ), an oxygen-deficient n-type wide band gap semiconductor material with an electronic bandgap of ~2.6–3.0 eV, has received a lot of attention [1,2,3,4]
In the last few years, several review reports have been published based on photo catalysts [19,20], electrochromic devices [21,22], gas sensors [23,24], and oxygen-deficient WO3 [25]
Compared to the dark conditions, the diodes measured under light conditions revealed lower n values
Summary
The transition metal oxide tungsten oxide (WO3 ), an oxygen-deficient n-type wide band gap semiconductor material with an electronic bandgap of ~2.6–3.0 eV, has received a lot of attention [1,2,3,4]. WO3 nanostructures in various morphologies (for example, instant nanorods (NRs), nanosheet, 3D nanostructured papilio paris, and thin films (TFs)) have been fabricated for a variety of applications, including gas sensors [7], efficient water splitting [8], photoelectrocatalytic activity [9], memory devices [10], photodetectors [11,12], and high temperature diodes [13,14]. In the last few years, several review reports have been published based on photo catalysts [19,20], electrochromic devices [21,22], gas sensors [23,24], and oxygen-deficient WO3 [25]. The research presented here should serve as a solid starting point for developing new nanostructured WO3 structures for emerging and future optical and electrical applications
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