Abstract
In recent days, the main motto of VLSI designers is to reduce the power and area as devices are becoming battery-operated, compact and require enhanced functionality and features. Due to the scaling and shrinking of devices, the transistor leakage power has increased at an exponential rate. In this paper, analysis on the research based on the Modified gate diffusion input technique (m-GDI) which has gained much attention in recent days are encompassed. Consequently, 31 research papers homologous to m-GDI technique are assessed and analysed based on the numerous targets. In this review, we present the m-GDI Technique, a low power technique and scrutinize the modern breakthroughs with several pros and cons. The thorough examination is done on finding the inclusion of the issues, methodologies, simulation tools and technologies used.
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