Abstract
With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Nanoelectronics based on carbon nanomaterials provides a broad prospect for the continuation of Moore’s law. In particular, in the field of optoelectronic devices, it is necessary to further develop new types of nano-optoelectronic devices. Carbon nanotubes (CNTs) are one of the representative materials of nanoelectronics with excellent electrical and optical properties, e.g., high mobility, suitable band structure, and good infrared absorption. The application of CNTs in optoelectronic devices is a very attractive research topic, which has been developed rapidly in recent years. Until now, various prototypes of CNT-based optoelectronic devices have been developed. In this Review, we briefly introduce the structure and photoelectric properties of CNTs. Then, according to different photo-electron coupling mechanisms, four types of CNTs based on optoelectronic devices are introduced in detail, namely, solar cells, photodetectors, light-emitting diodes, and lasers. Intrinsic and composite CNT-based optoelectronic devices are presented in order to describe the development of CNT-based optoelectronic devices. Finally, different material preparation, separation, and mixing methods of CNTs are discussed, which are the methods for basic material preparation for the fabrication of high performance CNT-based optoelectronic devices. An in-depth study of the development trend of CNT-based optoelectronic devices will contribute to the future development of novel high-performance nanoelectronic devices.
Highlights
Nowadays, integrated circuits are known as the cornerstone of modern information technology, which are fabricated by the silicon-based complementary metal–oxide–semiconductor (CMOS) process.1 With the development of integrated circuits in accordance with Moore’s law for more than half a century, traditional silicon-based CMOS devices have entered the 5 nm node and are approaching the physical limits of their performance.2 For subsequent integrated circuit developments, the importance of nanoelectronic science and technology is becoming increasingly prominent in the post-Moore era.3–6 Many mainstream semiconductor companies believe that the subsequent development of the microelectronics industry might have to abandon the use of silicon-based materials.7 the investigation of non-silicon nanoelectronic technology is of great importance for the development of integrated circuits,7 even the whole information technology industry in the future
Li et al.104 induced the orientation of the bacterial rhodopsin protein through the hydrophobicity of Carbon nanotubes (CNTs) and effectively produced an orientated bacterial rhodopsin plasma membrane on the surface of CNTs. These composite material preparation methods provide technical support for the preparation of high-performance CNT-based optoelectronic devices. This Review has systematically reviewed the photoelectric properties, optoelectronic devices, and fabrication methods of CNTs
The current advantages of CNT-based optoelectronic devices are as follows: In the field of solar cells, the good conductivity scitation.org/journal/adv of CNTs is suitable for making electrode materials, which can optimize the charge migration and stability of devices
Summary
Nowadays, integrated circuits are known as the cornerstone of modern information technology, which are fabricated by the silicon-based complementary metal–oxide–semiconductor (CMOS) process. With the development of integrated circuits in accordance with Moore’s law for more than half a century, traditional silicon-based CMOS devices have entered the 5 nm node and are approaching the physical limits of their performance. For subsequent integrated circuit developments, the importance of nanoelectronic science and technology is becoming increasingly prominent in the post-Moore era. Many mainstream semiconductor companies believe that the subsequent development of the microelectronics industry might have to abandon the use of silicon-based materials. the investigation of non-silicon nanoelectronic technology is of great importance for the development of integrated circuits, even the whole information technology industry in the future. These functionalized optoelectronic materials could be inorganic compounds, organic compounds, and biomolecules.14 The embedding of these functional organic molecular materials can be compatible with the traditional silicon-based process and realize electronic devices with different functions, which are suitable for the requirements of the development of micro–nanoelectronic technology, promoting the development of functional optoelectronic devices, and expanding the application fields of integrated circuits.. The embedding of these functional organic molecular materials can be compatible with the traditional silicon-based process and realize electronic devices with different functions, which are suitable for the requirements of the development of micro–nanoelectronic technology, promoting the development of functional optoelectronic devices, and expanding the application fields of integrated circuits.15–18 In this Review, as shown, the research progress of CNT-based optoelectronic devices is reviewed. The development trend of different CNT-based nano-optoelectronic devices is summarized, which will inspire the new design of high-performance CNT-based nanooptoelectronic devices and promote the development of generation nanoelectronics
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