A Review on Emerging Spintronic Devices: CMOS Counterparts

Abstract

As the scaling and integration limits of conventional devices in the semiconductor industry are approaching, spintronics devices have attracted an enormous amount of attraction. Spintronic devices can provide a solution for traditional charge-based implementation problems, such as large power consumption, high operating voltage, process issues, etc. The basic principle in spintronic field is the use of spin degree of freedom of electrons. What makes spintronics devices trending in research is their almost zero power leakage, high endurance, effective read and write capabilities than CMOS counterparts, nonvolatility nature, and ease of integration and support for high-end technologies such as Big data and IoT. These devices’ advantages have propelled the industry to use them in-memory applications and remodel the process in-memory architecture for future use. The paper reviews the advancements and achievements in the field of spintronics and its principles. Also, many spintronics devices such as spin logic devices, spin valves, etc., and magnetic phenomena such as tunnel magnetoresistance, spin hall effect, etc., are covered. In this paper, the advancements done in past 20 years, current position, and next growth aspects of spintronic technology have been discussed.