Abstract
Extraordinary interest has been gained in ZnO as an eminent host for dilute magnetic semiconductors because of its potential applications in optoelectronics, spin light emitting diodes, photovoltaics, photodetectors and solar cells. Its wide band gap of 3.3 eV and large exciton binding energy makes it potential material for spin light emitting diodes. The distribution and interaction of the native defects of ZnO play a major role in tailoring the optical and magnetic properties of ZnO. The redistribution of defects and their luminescence properties can be analysed with the help of Photoluminescence (PL) spectroscopy. This paper reviews the luminescence of intrinsic defects of ZnO and their emission in the PL spectrum.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
