Abstract
BiFeO3 is a very promising multiferroic materials, which can present ferroelectric and antiferromagnetic properties at room temperature (Tn=643 K, Tc= 1103 K). Ferroelectric domains in BiFeO3 thin films have attracted much attention due to their potential applications in memory devices. The aim of this paper is to review the main factors which can influence the ferroelectric domain structure in BiFeO3 thin films, including substrate, doping and film thickness.
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