Abstract
This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.
Highlights
Received: 18 November 2021Accepted: 8 December 2021Published: 11 December 2021Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations.Licensee MDPI, Basel, Switzerland.The search for sharp-switching devices compatible with modern complementary metal-oxide-semiconductor (CMOS) digital technology has been a central preoccupation of the device physics community for the past two decades
Boron implantation replaces the P* electrostatic doping, without affecting the sharpness of the device characteristics [18]. This solution is well suited to FinFETs and nanowires, it does sacrifice some of the reconfigurability
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Summary
Sorin Cristoloveanu 1, * , Joris Lacord 2 , Sébastien Martinie 2 , Carlos Navarro 3 , Francisco Gamiz 3 , Jing Wan 4 , Hassan El Dirani 1 , Kyunghwa Lee 1 and Alexander Zaslavsky 5.
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