A Reverse-RSSI Logarithmic Power Detector With +35-dBm Maximum Detectable Power in 180-nm CMOS

Abstract

This letter presents a CMOS reverse received signal strength indicator (reverse-RSSI) based logarithmic power detector (PD). A capacitor attenuation array and unbalanced source-coupled rectifiers are utilized to constitute the reverse-RSSI architecture, which greatly increases the maximum detectable power. Two auxiliary capacitors in the rectifier are introduced to improve linearity at high input power dramatically. The PD with 0.4–5-GHz operating frequency can be fully integrated and has stable and reliable performance according to multiple tests. Measurement results show that the maximum detectable power achieves +35 dBm and dynamic range reaches 45 dB with ±1-dB linearity error. The proposed PD is implemented in a standard 180-nm CMOS process with 0.085 mm2 core area. The total static power consumption is 0.78 mW with a 3.3-V supply voltage.