Abstract
Electronic synapse based on two-dimensional material are equivalent to synapses because of their excellent properties, which is very pivotal for constructing neuromorphic computing to break through the traditional Von Neumann architecture. In the study, a vertical double-ended memristor is prepared by using the dispersion of molybdenum disulfide nanosheets. Memristors based on MoTe2 structure show stable bipolar nonvolatile resistive behavior. Based on this, we introduce carbon dots layer into the original device structure, and improve the device performance by using carbon atoms to form new conductive filaments driven by electric field. This research provides a reliable solution for the next generation of neuromorphic computing.
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