A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Abstract

An improved GaN high electron mobility transistor (HEMT) small-signal equivalent model is proposed. To model the effects of extrinsic parameters that vary with the bias voltage, RL and Lds are added to the model. Moreover, substrate-related parameters (Rsub and Csub) are used to model the substrate effect. In order to avoid damaging the gate under high forward gate pressure conditions, an accurate parasitic parameter extraction method is proposed, which improves the reliability and validity of the parameter extraction. The S-parameters of the proposed model are in good agreement with the measured S-parameters in the range of 0.5–20.5 GHz.