A relaxation scheme for the hydrodynamic equations for semiconductors

Abstract

In this paper, we shall study numerically the hydrodynamic model for semiconductor devices, particularly in a one-dimensional n + nn + diode. By using a relaxation scheme, we explore the effects of various parameters, such as the low field mobility, device length, and lattice temperature. The effect of different types of boundary conditions is discussed. We also establish numerically the asymptotic limits of the hydrodynamic model towards the energy-transport and drift-diffusion models. This verifies the theoretical results in the literature.