Abstract
This paper describes an effective switching loss estimation of nonpunchthrough (NPT) IGBT, and a comparison of switching losses between 1200 V class NPT and punchthrough (PT) IGBT. VVVF inverter loss calculations of 1200 V NPT and PT-IGBT were carried out using the experimental data. The calculation result was reinforced by the numerical device simulation results. As a result, it is shown that switching loss and VVVF inverter loss of NPT-IGBT are larger than that of PT-IGBT for 1200 V class. Using above VVVF inverter loss results, thermal simulation for temperature rise of an IGBT module are demonstrated.
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