A Regulated Charge Pump for Tunneling Floating-Gate Transistors

Abstract

Flash memory is an important component in many embedded system-on-a-chip applications, which drives the need to generate high write/erase voltages in generic CMOS processes. In this paper, we present a regulated, high-voltage charge pump for erasing Flash memory and floating-gate transistors. This 0.069-mm2 charge pump was fabricated in a 0.35 $\mu \text {m}$ standard CMOS process. While operating from a 2.5 V supply, the charge pump generates regulated voltages up to 16 V with a PSRR of 52 dB and an output impedance of 6.8 $\text{k}\Omega $ . To reduce power consumption for use in battery-powered applications, this charge pump uses a variable-frequency regulation technique and a new circuit for minimizing short-circuit current in the clock-generation circuitry; the resulting charge pump is able to erase the charge on floating-gate transistors using only $1.45 \mu J$ .