A reflection lithography using multicharged ions

Abstract

A new approach is proposed for lithography with an objective of high throughput and minimum feature size 50 nm and below — the Ion Reflection Lithography (IRL) using multicharged ions. The concept is based on a recent fundamental discovery of a special characteristic of multicharged ion interaction with solid surface: Very Slow Multicharged Ion (VSMCI) beams, i.e. in the eV/q energy range, can be selectively reflected on a nanometric scale from semiconductor and metal substrates. We present in this paper the basic processes of the interaction between a VSMCI and surfaces, and discuss the property of VSMCI to be reflected selectively in dependence on the conductive character of the substrate. The patterned ion beam formation which relies on an innovating reflective reticle is described and a first outline of an IRL system is presented.