Abstract
The investigation reports on fabrication and measurements of heterojunction diode based on ZnO layer. The layers are ultrasonic sprayed onto p-type silicon substrates at 350 °C and the front contacts made from aluminum have been thermally evaporated in low pressure vacuum. The Al/ZnO/p-Si/Al device is then made-up and characterized by current-voltage and capacitance-voltage under dark, light and temperature environments. The ideality factor exceeds the unity which confirms the non-ideal comportment of such device based on nZnO layer. An interesting rectifying sketch around 2544 in dark and 4082 in light is recorded as shown by I–V curve. The electrical parameters of such device are determined in dark and light (60–150 mW/cm2) conditions displaying the values of ideality factor (ni) of 3.5 (1.6), barrier height ΦB of 0.74 (0.89) V, series resistance Rs of 5 (1.6) kΩ. Influence of temperature on the current-voltage curve is evidenced within the 22–107 °C range. To boost this study, the measurement of C–V-f characteristics are measured and interface state densities of ZnO/p-Si diode in dark, light and temperature environments are investigated. Richardson plot evidences numerous parameters of ZnO/pSi heterojunction diode.
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