A recombination center in p-type GaAsN grown by chemical beam epitaxy

Abstract

The double carrier pulse deep level transient spectroscopy (DLTS) technique is used to characterize recombination centers in p-type GaAsN grown by chemical beam epitaxy. The DLTS peak height of a shallow hole trap H1, at 0.052 eV from the valence band edge of GaAsN, decreases by the injection of both majority and minority carriers for various values of voltage and duration of the second pulse. Although the trap is shallow, its capture cross section is relatively large to capture electrons and holes. The decrease in the number of traps is explained by the electron–hole recombination process. This confirms, for the first time, that H1 is a recombination center in p-type GaAsN.