Abstract
Tremendous enhancement of light-matter interaction in plasmonic-dielectric hybrid devices allows for non-linearities at the level of single emitters and few photons, such as single photon transistors. However, constructing integrated components for such devices is technologically extremely challenging. We tackle this task by lithographically fabricating an on-chip plasmonic waveguide-structure connected to far-field in- and out-coupling ports via low-loss dielectric waveguides. We precisely describe our lithographic approach and characterize the fabricated integrated chip. We find excellent agreement with rigorous numerical simulations. Based on these findings we perform a numerical optimization and calculate concrete numbers for a plasmonic single-photon transistor.
Highlights
Fields are accessible from the outside[17] rendering SPPs interesting for functionalization with single emitters in hybrid approaches
We show here how the rather idealized system of a single emitter controlling the transmission of SPPs in a cylindrical nanowire considered in the proposal by Chang et al.[4] can be transformed into a practical on-chip device
A stable single quantum emitter with predictable properties, large optical dipole moment, and – importantly – with a large branching ratio ηZPL of emission into its zero phonon line (ZPL) with respect to phonon-assisted emission (ηZPL is referred to as Debye-Waller factor)
Summary
Design considerations for a quantum plasmonic non-linear element. For an experimental realization of a single photon non-linear device, based on a hybrid approach like discussed before, there are two key ingredients:. An efficient, integrated dielectric-plasmonic structure that allows for high coupling rates between emitter and guided mode, i.e., high Purcell factors and low quenching rates,. The Si3N4 layer is partially removed in a highly anisotropic CHF3-RIE process at the designated positions of the plasmonic parts (Fig. 2c) At this step the control of the etch-depth allows adjusting of the vertical placement of the plasmonic transducer, which might be used in principle as an additional control parameter to achieve coupling efficiencies even higher than predicted in ref. When we consider a single emitter in the slot waveguide controlling the transmittance T and reflectance R, a figure of merit can be defined as the product of the collected photons from the chip γout and the visibility VIS of a transmission dip This figure of merit corresponds perfectly to experimentally accessible quantities as was shown in ref. For an optimum emitter orientation and position in the center of the slot we expect a value of γout ⋅ VIS ≈ 4.07 ⋅ 106 photons per second
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