Abstract
**Please read the paper on the following link:** https://1worldcontent.com/ess/9211.pdf **Abstract:** We present a tunneling magnetoresistive (TMR) sensing microsystem consisting of a low flicker noise TMR sensor and a custom integrated readout frontend. The proposed sensor readout circuit introduces a novel ultra-low-noise current biasing scheme for the TMR sensor, which achieves a very low current noise floor of 2.2 pA/sqrt(Hz) for a 1mA biasing current. The TMR output voltage is processed by a differential readout scheme to improve the baseline-to-signal ratio. The microsystem also features an on-chip 10-bit current DAC that allows compensating for the large process variations in the TMR base resistance value. The readout chip is manufactured in a 180nm SOI CMOS technology and heterogeneously integrated with the TMR sensor. The readout chain provides a thermal noise floor of 4 nV/sqrt(Hz), while, together with the biasing scheme, consuming a total power of 38mW. The complete sensor system consisting of the TMR and the readout circuit provides a state-of-the-art magnetic field noise floor of 120 pT/sqrt(Hz).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
