Abstract

Aligned tin dioxide (SnO 2) nanorods have been synthesized by high-frequency inductive heating. Nanorods were grown on silicon substrates vertically in less than 3 min, using SnO 2 and graphite as the source powder. Scanning electron microscopy and transmission electron microscopy showed nanorod with diameters from 25 to 50 nm. The turn-on field needed to produce a current density of 10 μA/cm 2 is found to be 1.6 V/μm. This type of SnO 2 nanorods can be applied as field emitters in displays as well as vacuum electric devices.

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