Abstract
A single expression relating the carrier drift velocity in semiconductors under an electric field to Raman scattering data is derived resorting to a full nonequilibrium picture for electrons and holes. It allows one to probe with high optical precision both the ultrafast transient as well as the steady state carriers' drift velocity in semiconductor systems. This is achieved by simply modifying the experimental geometry, thus changing the angle between the transferred wave vector Q and the applied electric field E, and measuring the frequency shift promoted by the presence of the field to be observed in the single-particle and plasmon scattering spectra. An application to zinc-blende gallium nitride is presented to highlight the power of the method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
