Abstract
Spin transfer torque (STT-RAM) is a fast, scalable and non-volatile memory technology. These characteristics make STT-RAM one of the best candidates among memories that can be used for space applications. Although STT-RAM cell itself is immune to high energy particles, its sensing circuit might be severely affected by radiation. In this work, we first extensively analyze the effect of radiation on the STT-RAM sense circuit and then propose a radiation hardened circuit. Using a dual modular redundancy and a voting scheme, radiation susceptibility of the sense circuit is eliminated. The sense circuit is implemented in 45 nm CMOS technology. Simulation results show that the proposed circuit is immune to radiation pulses up to 400 Krad.
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