Abstract
A high-stability radiation-hard crystal oscillator/divider fabricated in silicon-on-sapphire technology is described. Many analog functions are implemented in the chip, and an AGC system is used to reduce the influence of transistor parameter variations. Methods for obtaining radiation hardness by circuit design are discussed, and the particular problems associated with realizing analog circuits in SOS are addressed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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