Year-end Sale % OFF 
Abstract
This paper describes a quasianalytical model for the calculation of the current–voltage characteristics of LT–GaAs and LT–Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's equation, the current continuity equation, and the Chang–Fetterman velocity-field equations have been solved analytically. When the devices are operating in the linear region and the knee region, the one-dimensional Poisson equation is considered. When the devices are in the saturation regime, the two-dimensional Poisson equation is solved analytically. The resulting output current–voltage characteristics are in good agreement with experimental data. This model has been used to predict the RF performance and RF power capability of these MISFETs. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 61–66, 2000.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
