A quantum sensing metrology for magnetic memories

Abstract

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device properties becomes a key enabler of new applications at this stage of technology development. Here, we introduce a non-contact metrology technique deploying scanning NV magnetometry (SNVM) to investigate MRAM performance at the individual bit level. We demonstrate magnetic reversal characterization in individual, <60 nm-sized bits, to extract key magnetic properties, thermal stability, and switching statistics, and thereby gauge bit-to-bit uniformity. We showcase the performance of our method by benchmarking two distinct bit etching processes immediately after pattern formation. In contrast to ensemble averaging methods such as perpendicular magneto-optical Kerr effect, we show that it is possible to identify out of distribution (tail-bits) bits that seem associated to the edges of the array, enabling failure analysis of tail bits. Our findings highlight the potential of nanoscale quantum sensing of MRAM devices for early-stage screening in the processing line, paving the way for future incorporation of this nanoscale characterization tool in the semiconductor industry.