Abstract
In this paper we have used quantum mechanical transport approach to analyze electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyses employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical transport model uses the non equilibrium Green's function (NEGF) [1] while the semi classic model doesn't account for tunneling current. We investigate the effect of tunneling current on I-V characteristics of Nanowire transistor with the different channel length. We have used of NANO TCAD ViDES software to analyze a DG (double gate) silicon nano wire transistor. We get that when the channel length increases to20nm and upper, tunneling is significant only for inversion condition, while for low gate voltages the error between these two models is negligible.
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