A quantum dot infrared photodetector with lateral carrier transport

Abstract

In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 μm (186 meV ) and reaches several A/W up to 60 K . The intrinsic detector response time is determined to be about 0.8 ms . Temperature and frequency dependence of the detector structure are discussed.